IRL3803 N-Channel Power MOSFET

ER-951

14 Items

N-Channel 30V 140A (Tc) 200W (Tc) Through Hole TO-220AB

7.35 AED

7.00 AED AED tax excl.

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

Features:
  • Logic-Level Gate Drive
  • Advanced Process Technology
  • Ultra Low On-Resistance
  • Dynamic dv/dt Rating
  • 175°C Operating Temperature
  • Fast Switching
  • Fully Avalanche Rated
ManufacturerInfineon Technologies
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C140A (Tc)
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs140nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds5000pF @ 25V
FET Feature-
Power Dissipation (Max)200W (Tc)
Rds On (Max) @ Id, Vgs6 mOhm @ 71A, 10V
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

Datasheet

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