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Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
|Technology||MOSFET (Metal Oxide)|
|Drain to Source Voltage (Vdss)||30V|
|Current - Continuous Drain (Id) @ 25°C||140A (Tc)|
|Vgs(th) (Max) @ Id||1V @ 250µA|
|Gate Charge (Qg) (Max) @ Vgs||140nC @ 4.5V|
|Input Capacitance (Ciss) (Max) @ Vds||5000pF @ 25V|
|Power Dissipation (Max)||200W (Tc)|
|Rds On (Max) @ Id, Vgs||6 mOhm @ 71A, 10V|
|Operating Temperature||-55°C ~ 175°C (TJ)|
|Mounting Type||Through Hole|
|Supplier Device Package||TO-220AB|
|Package / Case||TO-220-3|