IRL3803 N-Channel MOSFET
IRL3803 N-Channel MOSFET
IRL3803 N-Channel MOSFET
IRL3803 N-Channel MOSFET

IRL3803 N-Channel Power MOSFET

N-Channel 30V 140A (Tc) 200W (Tc) Through Hole TO-220AB
ER-951
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AED7.50
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Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

Features:
  • Logic-Level Gate Drive
  • Advanced Process Technology
  • Ultra Low On-Resistance
  • Dynamic dv/dt Rating
  • 175°C Operating Temperature
  • Fast Switching
  • Fully Avalanche Rated
Manufacturer Infineon Technologies
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 140A (Tc)
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 140nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 5000pF @ 25V
FET Feature -
Power Dissipation (Max) 200W (Tc)
Rds On (Max) @ Id, Vgs 6 mOhm @ 71A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3

Datasheet

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