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1N5822 Employs the Schottky Barrier principle in a large area metal–to–silicon power diode. The State of art geometry, features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact.
Specifications
- Low power loss, high efficiency
- Ideally suited for use as rectifiers in low–voltage
- free wheeling diodes
- polarity protection diodes
- Guardring for overvoltage protection
- Very small conduction losses
- Extremely fast switching
- Low forward voltage drop
- High forward surge capability
- High frequency operation
Power: 1 Watt
