1N5822-3A Schottky Diode (Pack of 5)

1N5822 Employs the Schottky Barrier principle in a large area metal–to–silicon power diode. The State of art geometry, features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact.

Specifications

• Low power loss, high efficiency
• Ideally suited for use as rectifiers in low–voltage
• free wheeling diodes
• polarity protection diodes
• Guardring for overvoltage protection
• Very small conduction losses
• Extremely fast switching
• Low forward voltage drop
• High forward surge capability
• High frequency operation

Power: 1 Watt

Mounting: Through Hole

Datasheet