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High Speed Switching N-channel Power MOSFET
Features
- Drain-Source Volt (Vds): 40V
- Gate-Source Volt (Vgs): 20V
- Drain Current (Id): 202A
- Power Dissipation (Ptot): 333W
- Type: N-Channel
- RoHS Compliant
- Low RDS(on)
- Industry-leading quality
- Dynamic dv/dt Rating
- Fast Switching
- Fully Avalanche Rated
- 175°C Operating Temperature
