1N5822-3A Schottky Diode

ER-206

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Diode Schottky 40Volt 3A 2-Pin 1Watt

1.00 AED

1N5822 Employs the Schottky Barrier principle in a large area metal–to–silicon power diode. The State of art geometry, features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact.

Specifications

  • Low power loss, high efficiency
  • Ideally suited for use as rectifiers in low–voltage
  • free wheeling diodes
  • polarity protection diodes
  • Guardring for overvoltage protection
  • Very small conduction losses
  • Extremely fast switching
  • Low forward voltage drop
  • High forward surge capability
  • High frequency operation

Power: 1 Watt

Mounting: Through Hole

Datasheet